NTJD4001NT1G MOSFET 30V 250mA Dual N-Umuyoboro

Ibisobanuro bigufi:

Ababikora: KURI Semiconductor
Icyiciro cyibicuruzwa: Transistors - FET, MOSFETS - Imirongo
Urupapuro rwamakuru:NTJD4001NT1G
Ibisobanuro: MOSFET 2N-CH 30V 0.25A SOT-363
Imiterere ya RoHS: Yujuje RoHS


Ibicuruzwa birambuye

Ibiranga

Porogaramu

Ibicuruzwa

Description Ibisobanuro

Ibiranga ibicuruzwa Ikiranga Agaciro
Uruganda: onsemi
Icyiciro cy'ibicuruzwa: BYINSHI
RoHS: Ibisobanuro
Ikoranabuhanga: Si
Uburyo bwo Kuzamuka: SMD / SMT
Ipaki / Urubanza: SC-88-6
Inzira ya Transistor: N-Umuyoboro
Umubare w'Imiyoboro: Umuyoboro
Vds - Umuyoboro-Inkomoko Kumeneka Umuvuduko: 30 V.
Id - Imiyoboro ikomeza: 250 mA
Rds Kuri - Imiyoboro-Inkomoko yo Kurwanya: 1.5 Ohms
Vgs - Irembo-Inkomoko Umuvuduko: - 20 V, + 20 V.
Vgs th - Irembo-Inkomoko ya Threshold Umuvuduko: 800 mV
Qg - Irembo ry'Irembo: 900 pC
Ubushyuhe buke bwo gukora: - 55 C.
Ubushyuhe ntarengwa bwo gukora: + 150 C.
Pd - Gukwirakwiza imbaraga: 272 mW
Uburyo bw'Umuyoboro: Gutezimbere
Gupakira: Reel
Gupakira: Kata Tape
Gupakira: MouseReel
Ikirango: onsemi
Iboneza: Kabiri
Igihe cyo Kugwa: 82 ns
Imbere ya Transconductance - Min: 80 mS
Uburebure: 0,9 mm
Uburebure: Mm 2
Igicuruzwa: BYINSHI Ikimenyetso gito
Ubwoko bwibicuruzwa: BYINSHI
Igihe cyo Kuzamuka: 23 ns
Urukurikirane: NTJD4001N
Ingano y'ipaki y'uruganda: 3000
Icyiciro: MOSFETS
Ubwoko bwa Transistor: 2 N-Umuyoboro
Ubusanzwe Kuzimya-Gutinda Igihe: 94 ns
Ubusanzwe gufungura-Gutinda Igihe: 17 ns
Ubugari: 1,25 mm
Uburemere bw'igice: 0.010229 oz

 


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