SI1029X-T1-GE3 MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
Description Ibisobanuro
| Ibiranga ibicuruzwa | Ikiranga Agaciro |
| Uruganda: | Vishay |
| Icyiciro cy'ibicuruzwa: | BYINSHI |
| RoHS: | Ibisobanuro |
| Ikoranabuhanga: | Si |
| Uburyo bwo Kuzamuka: | SMD / SMT |
| Ipaki / Urubanza: | SC-89-6 |
| Inzira ya Transistor: | N-Umuyoboro, P-Umuyoboro |
| Umubare w'Imiyoboro: | Umuyoboro |
| Vds - Umuyoboro-Inkomoko Kumeneka Umuvuduko: | 60 V. |
| Id - Imiyoboro ikomeza: | 500 mA |
| Rds Kuri - Imiyoboro-Inkomoko yo Kurwanya: | 1.4 Ohms, 4 Ohms |
| Vgs - Irembo-Inkomoko Umuvuduko: | - 20 V, + 20 V. |
| Vgs th - Irembo-Inkomoko ya Threshold Umuvuduko: | 1 V. |
| Qg - Irembo ry'Irembo: | 750 pC, 1.7 nC |
| Ubushyuhe buke bwo gukora: | - 55 C. |
| Ubushyuhe ntarengwa bwo gukora: | + 150 C. |
| Pd - Gukwirakwiza imbaraga: | 280 mW |
| Uburyo bw'Umuyoboro: | Gutezimbere |
| Tradename: | Umuyoboro |
| Gupakira: | Reel |
| Gupakira: | Kata Tape |
| Gupakira: | MouseReel |
| Ikirango: | Vishay Semiconductor |
| Iboneza: | Kabiri |
| Imbere ya Transconductance - Min: | 200 mS, 100 mS |
| Uburebure: | 0,6 mm |
| Uburebure: | 1,66 mm |
| Ubwoko bwibicuruzwa: | BYINSHI |
| Urukurikirane: | SI1 |
| Ingano y'ipaki y'uruganda: | 3000 |
| Icyiciro: | MOSFETS |
| Ubwoko bwa Transistor: | 1 N-Umuyoboro, 1 P-Umuyoboro |
| Ubusanzwe Kuzimya-Gutinda Igihe: | 20 ns, 35 ns |
| Ubusanzwe gufungura-Gutinda Igihe: | 15 ns, 20 ns |
| Ubugari: | 1,2 mm |
| Igice # Aliases: | SI1029X-GE3 |
| Uburemere bw'igice: | 32 mg |
• Halogen idafite Ukurikije IEC 61249-2-21 Ibisobanuro
• TrenchFET® MOSFETE Yimbaraga
• Ikirenge gito cyane
• Guhindura uruhande rwo hejuru
• Kurwanya Kurwanya:
N-Umuyoboro, 1.40 Ω
Umuyoboro, 4 Ω
• Imipaka mike: ± 2 V (ubwoko.)
• Umuvuduko Wihuse: 15 ns (ubwoko.)
• Irembo-Inkomoko ESD Irinzwe: 2000 V.
• Yubahirije Amabwiriza ya RoHS 2002/95 / EC
• Simbuza Digital Transistor, Urwego-Shifter
Sisitemu ikoreshwa na bateri
• Imiyoboro yo gutanga amashanyarazi
