IPD50N04S4-10 MOSFET N-Ch 40V 50A DPAK-2 OptiMOS-T2
Description Ibisobanuro
| Ibiranga ibicuruzwa | Ikiranga Agaciro |
| Uruganda: | Infineon |
| Icyiciro cy'ibicuruzwa: | BYINSHI |
| RoHS: | Ibisobanuro |
| Ikoranabuhanga: | Si |
| Uburyo bwo Kuzamuka: | SMD / SMT |
| Ipaki / Urubanza: | TO-252-3 |
| Inzira ya Transistor: | N-Umuyoboro |
| Umubare w'Imiyoboro: | Umuyoboro |
| Vds - Umuyoboro-Inkomoko Kumeneka Umuvuduko: | 40 V. |
| Id - Imiyoboro ikomeza: | 50 A. |
| Rds Kuri - Imiyoboro-Inkomoko yo Kurwanya: | 9.3 mOhms |
| Vgs - Irembo-Inkomoko Umuvuduko: | - 20 V, + 20 V. |
| Vgs th - Irembo-Inkomoko ya Threshold Umuvuduko: | 3 V. |
| Qg - Irembo ry'Irembo: | 18.2 nC |
| Ubushyuhe buke bwo gukora: | - 55 C. |
| Ubushyuhe ntarengwa bwo gukora: | + 175 C. |
| Pd - Gukwirakwiza imbaraga: | 41 W. |
| Uburyo bw'Umuyoboro: | Gutezimbere |
| Ibisabwa: | AEC-Q101 |
| Tradename: | OptiMOS |
| Gupakira: | Reel |
| Gupakira: | Kata Tape |
| Ikirango: | Ikoranabuhanga rya Infineon |
| Iboneza: | Ingaragu |
| Igihe cyo Kugwa: | 5 ns |
| Uburebure: | Mm 2,3 |
| Uburebure: | 6.5 mm |
| Ubwoko bwibicuruzwa: | BYINSHI |
| Igihe cyo Kuzamuka: | 7 ns |
| Urukurikirane: | OptiMOS-T2 |
| Ingano y'ipaki y'uruganda: | 2500 |
| Icyiciro: | MOSFETS |
| Ubwoko bwa Transistor: | 1 N-Umuyoboro |
| Ubusanzwe Kuzimya-Gutinda Igihe: | 4 ns |
| Ubusanzwe gufungura-Gutinda Igihe: | 5 ns |
| Ubugari: | 6.22 mm |
| Igice # Aliases: | IPD5N4S41XT SP000711466 IPD50N04S410ATMA1 |
| Uburemere bw'igice: | 330 mg |
• N-umuyoboro - Uburyo bwo kuzamura
• AEC yujuje ibyangombwa
• MSL1 kugeza kuri 260 ° C.
Ubushyuhe bwo gukora 175 ° C.
• Ibicuruzwa bibisi (byubahiriza RoHS)
• Avalanche yapimwe 100%
