IKW50N65ES5XKSA1 IGBT Transistors INDUSTRY 14
Description Ibisobanuro
Ibiranga ibicuruzwa | Ikiranga Agaciro |
Uruganda: | Infineon |
Icyiciro cy'ibicuruzwa: | IGBT Transistors |
Ikoranabuhanga: | Si |
Ipaki / Urubanza: | TO-247-3 |
Uburyo bwo Kuzamuka: | Binyuze mu mwobo |
Iboneza: | Ingaragu |
Mukoranya- Umuyoboro wa Emitteri VCEO Max: | 650 V. |
Umuyoboro-Emitter Yuzuye Umuvuduko: | 1.35 V. |
Umuvuduko ntarengwa w'irembo rya Emitter: | 20 V. |
Gukomeza Gukusanya Ibiriho kuri 25 C: | 80 A. |
Pd - Gukwirakwiza imbaraga: | 274 W. |
Ubushyuhe buke bwo gukora: | - 40 C. |
Ubushyuhe ntarengwa bwo gukora: | + 175 C. |
Urukurikirane: | TRENCHSTOP 5 S5 |
Gupakira: | Itiyo |
Ikirango: | Ikoranabuhanga rya Infineon |
Irembo-Emitter Kumena Ibiriho: | 100 nA |
Uburebure: | 20,7 mm |
Uburebure: | 15.87 mm |
Ubwoko bwibicuruzwa: | IGBT Transistors |
Ingano y'ipaki y'uruganda: | 240 |
Icyiciro: | IGBTs |
Tradename: | TRENCHSTOP |
Ubugari: | 5.31 mm |
Igice # Aliases: | IKW50N65ES5 SP001319682 |
Uburemere bw'igice: | 0.213537 oz |
ByihutaS5Ikoranabuhanga
• Umuvuduko mwinshi wo gusweradeviceforhard & softswitching
• VeryLowVCEsat, 1.35Vatnominalcurrent
• Plugandplayreplacement ofpreviousgenerationIGBTs
• 650Vbreakdownvoltage
• Amashanyarazi makeQG
• IGBTcopackedwithfullratedRAPID1fastantiparalleldiode
• Ubushyuhe ntarengwa 175 ° C.
• Impamyabumenyi yujuje ibyangombwaJEDECfortargetapplications
• Pb-yubusa; RoHScompliant
• Ibicuruzwa byuzuye byerekana ibicuruzwa: http://www.infineon.com/igbt/
• Resonantconverters
• Imbaraga zidasubirwaho
• Weldingconverters
• Midtohighrangeswitchingfrequencyconverters