IKW50N65EH5XKSA1 IGBT Transistors INDUSTRY 14
Description Ibisobanuro
| Ibiranga ibicuruzwa | Ikiranga Agaciro |
| Uruganda: | Infineon |
| Icyiciro cy'ibicuruzwa: | IGBT Transistors |
| Ikoranabuhanga: | Si |
| Ipaki / Urubanza: | TO-247-3 |
| Uburyo bwo Kuzamuka: | Binyuze mu mwobo |
| Iboneza: | Ingaragu |
| Mukoranya- Umuyoboro wa Emitteri VCEO Max: | 650 V. |
| Umuyoboro-Emitter Yuzuye Umuvuduko: | 1.65 V. |
| Umuvuduko ntarengwa w'irembo rya Emitter: | 20 V. |
| Gukomeza Gukusanya Ibiriho kuri 25 C: | 80 A. |
| Pd - Gukwirakwiza imbaraga: | 275 W. |
| Ubushyuhe buke bwo gukora: | - 40 C. |
| Ubushyuhe ntarengwa bwo gukora: | + 175 C. |
| Urukurikirane: | Umuyoboro IGBT5 |
| Gupakira: | Itiyo |
| Ikirango: | Ikoranabuhanga rya Infineon |
| Irembo-Emitter Kumena Ibiriho: | 100 nA |
| Uburebure: | 20,7 mm |
| Uburebure: | 15.87 mm |
| Ubwoko bwibicuruzwa: | IGBT Transistors |
| Ingano y'ipaki y'uruganda: | 240 |
| Icyiciro: | IGBTs |
| Tradename: | TRENCHSTOP |
| Ubugari: | 5.31 mm |
| Igice # Aliases: | IKW50N65EH5 SP001257944 |
| Uburemere bw'igice: | 0.213383 oz |
ByihutaH5Ikoranabuhanga
• Ibyiza-muri-Classefficiencyinhardswitchingandresonant topologiya
• Plugandplayreplacement ofpreviousgenerationIGBTs
• 650Vbreakdownvoltage
• Amashanyarazi makeQG
• IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode
• Ubushyuhe ntarengwa 175 ° C.
• Impamyabumenyi yujuje ibyangombwaJEDECfortargetapplications
• Pb-yubusa; RoHScompliant
• Ibicuruzwa byuzuye byerekana ibicuruzwa: http://www.infineon.com/igbt/
• Imbaraga zidasubirwaho
• Imirasire y'izuba
• Weldingconverters
• Midtohighrangeswitchingfrequencyconverters
